STW81101 Wireless Infrastructure ICsMulti-band RF frequency synthesizer with integrated VCOs L5959 Car Entertainment ICsMultifunction voltage regulator for car radio VNQ5050AK-E Intelligent Power Switches for IndustrialQuad channel high side driver with analog current sense for automotive applications L6375S 2.2V to 5V video buffer with SAG correction MD2103DFH Transistors, Power Bipolar High voltage NPN power transistor for standard definition crt displayĪB-54003L-512 Transistors, Radio Frequency 2 stages RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETsĭB-55025-540 Transistors, Radio Frequency RF power amplifier using 1 x PD55025 N-channel enhancement-mode lateral MOSFETs Some Part number from the same manufacture ST Microelectronics, Inc. operating junction temperature Value to 150 Unit Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation = 25☌ Insulation withstand voltage (rms) from all three leads to external heatsink Storage temperature Max.
0 Comments
Leave a Reply. |